Increasing EMI Immunity and Linearity of a CMOS 180 nm Voltage-to-Delay Converter
نویسندگان
چکیده
This paper presents a voltage-controlled delay unit (VCDU) with novel architecture allowing for wide input range of linearity and an improved immunity to electromagnetic interferences. The circuit is based on current-starved inverter biasing technique extend the voltage near rail-to-rail range. proposed scheme was designed by UMC 180 nm standard CMOS process works without power-hungry amplifiers or comparators. It has supply 1.8 V exhibits (0–1.8 V) average EMI-induced jitter only 1% nominal delay.
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ژورنال
عنوان ژورنال: Electronics
سال: 2022
ISSN: ['2079-9292']
DOI: https://doi.org/10.3390/electronics11081177